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Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation. Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
This memo introduces ion implantation processing. The introduction and background sections present applications that might be considered for ion implantation processing and give a brief description of the apparatus and the physical principles underlying the techniques. The entire process of ion beam processing is described to allow the reader to plan treatment parameters for parts and/or to double check treatment parameters recommended by vendors. This document provide workers in the field with a handbook of tables, graphs and equations that are needed for doing ion implantation processing. These include tables of ion ranges and straggling, formulae and tables which allow estimates to be simply made for sputtering coefficients, depth profiles of implanted elements, damage profiles, dose for sputter saturation of implanted profiles, temperatures reached by parts in vacuum during implantation, and estimates of the time and cost of ion implantation. Keywords: Ion implantation; Surface modification; Ion beam analysis; Ion beam processing; Corrosion; Ion Range; Sputtering; Materials processing; Applications of ion implantation; Wear; Straggling; Alloy formation; Tribology.
Materials Processing by Cluster Ion Beams: History, Technology, and Applications discusses the contemporary physics, materials science, surface engineering issues, and nanotechnology capabilities of cluster beam processing. Written by the originator of the gas cluster ion beam (GCIB) concept, this book: Offers an overview of ion beam technologies, from the discovery of monomer ions to the introduction of GCIBs Explores the development of sources for producing cluster beams from solid materials Describes the engineering characteristics of gas cluster ion beam equipment Covers cluster ion-solid surface interaction kinetics as well as sputtering, implantation, and ion-assisted deposition Details surface processing techniques for smoothing, shallow implantation, and preparation of high-quality thin films Introduces representative examples of emerging GCIB industrial applications Materials Processing by Cluster Ion Beams: History, Technology, and Applications provides a deeper understanding of the importance of cluster ion beams and their applications.
Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
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